any changing of specification will not be informed individual s8 550 pnp silicon plastic-encapsulate transistors complimentary to s8050 collector current: ic=0.5a features collector base emitter dim min max a 2.800 3.040 b 1.200 1.400 c 0.890 1.110 d 0.370 0.500 g 1.780 2.040 h 0.013 0.100 j 0.085 0.177 k 0.450 0.600 l 0.890 1.020 s 2.100 2.500 v 0.450 0.600 all dimension in mm sot-23 k j c h l a b s g v 3 1 2 d top view http://www.secosgmbh.com elektronische bauelemente 1 2 3 01 -jun-2007 rev. a page 1 of 2 m a r k i n g : 2 t y m a x i m u m r a t i n g s ( t a = 2 5 c o u n l e s s o t h e r w i s e n o t e d ) s y m b o l p a r a mete r v a lue u n i t s v c b o c o l l e c t o r - b a s e v o l t a g e - 4 0 v v c e o c o l l e c t o r - e m i t t e r v o l t a g e - 2 5 v v e b o e m i t t e r - b a s e v o l t a g e - 5 v i c c o l l e c t o r c u r r e n t - c o n t i n u o u s - 0 . 5 a p c coll ector dissi p a tio n 0.3 w t j junctio n t e mperature 150 t st g s t orage t e mpe r ature -55-1 50 electrical chara cteristics (t amb=25 unless other w is e specified) p a r a m e t e r s y m b o l t e s t c o n d i t i o n s m i n t y p m a x u n i t c o l l e c t o r - b a s e b r e a k d o w n v o l t a g e v ( b r ) c b o i c = - 1 0 0 | a , i e = 0 - 4 0 v c o l l e c t o r - e m i t t e r b r e a k d o w n v o l t a g e v ( b r ) c e o i c = - 1 m a , i b = 0 - 2 5 v e m i t t e r - b a s e b r e a k d o w n v o l t a g e v ( b r ) e b o i e = - 1 0 0 | a , i c = 0 - 5 v c o l l e c t o r c u t - o f f c u r r e n t i c b o v c b = - 4 0 v , i e = 0 - 0 . 1 | a c o l l e c t o r c u t - o f f c u r r e n t i c e o v c b = - 2 0 v , i e = 0 - 0 . 1 | a e m i t t e r c u t - o f f c u r r e n t i e b o v e b = - 3 v , i c = 0 - 0 . 1 | a h f e ( 1 ) v c e = - 1 v , i c = - 5 0 m a 1 2 0 3 5 0 d c c u r r e n t g a i n h f e ( 2 ) v c e = - 1 v , i c = - 5 0 0 m a 5 0 c o l l e c t o r - e m i t t e r s a t u r a t i o n v o l t a g e v c e ( s a t ) i c = - 5 0 0 m a , i b = - 5 0 m a - 0 . 6 v b a s e - e m i t t e r s a t u r a t i o n v o l t a g e v b e ( s a t ) i c = - 5 0 0 m a , i b = - 5 0 m a - 1 . 2 v t r a n s i t i o n f r e q u e n c y f t v c e =- 6v, i c = - 20ma f = 3 0 m h z 1 5 0 m h z rohs compliant product a suffix of "-c" specifies halogen & lead-free
http://www.secosgmbh.com elektronische bauelemente typic al chara cter i st ics 01 -jun-2007 rev. a page 2 of 2 any changing of specification will not be informed individual S8550 pnp silicon plastic-encapsulate transistors classifica tion of h fe(1) rank l h range 120- 200 200- 350
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